Title :
The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential
Author :
Laska, T. ; Münzer, M. ; Pfirsch, F. ; Schaeffer, C. ; Schmidt, T.
Author_Institution :
Infineon Technol., Munchen, Germany
Abstract :
By a vertical shrink of the NPT IGBT to a structure with a thin n - base and a low doped field stop layer a new IGBT can be realized with drastically reduced overall losses. Especially the combination of the field stop concept with a trench transistor cell results in the almost ideal carrier concentration for a device with minimum on state voltage and lowest switching losses
Keywords :
carrier density; insulated gate bipolar transistors; power transistors; Field Stop IGBT; carrier concentration; on-state voltage; power device; switching loss; trench transistor cell; Auditory implants; Breakdown voltage; Conductivity; Doping; Geometry; Insulated gate bipolar transistors; Process design; State estimation; Switching loss; Technological innovation;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856842
