DocumentCode
2239539
Title
The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential
Author
Laska, T. ; Münzer, M. ; Pfirsch, F. ; Schaeffer, C. ; Schmidt, T.
Author_Institution
Infineon Technol., Munchen, Germany
fYear
2000
fDate
2000
Firstpage
355
Lastpage
358
Abstract
By a vertical shrink of the NPT IGBT to a structure with a thin n - base and a low doped field stop layer a new IGBT can be realized with drastically reduced overall losses. Especially the combination of the field stop concept with a trench transistor cell results in the almost ideal carrier concentration for a device with minimum on state voltage and lowest switching losses
Keywords
carrier density; insulated gate bipolar transistors; power transistors; Field Stop IGBT; carrier concentration; on-state voltage; power device; switching loss; trench transistor cell; Auditory implants; Breakdown voltage; Conductivity; Doping; Geometry; Insulated gate bipolar transistors; Process design; State estimation; Switching loss; Technological innovation;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location
Toulouse
ISSN
1063-6854
Print_ISBN
0-7803-6269-1
Type
conf
DOI
10.1109/ISPSD.2000.856842
Filename
856842
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