Analysis on the low current turn-on behavior of IGBT module

Author

Momota, S. ; Otsuki, M. ; Ishii, K. ; Takubo, H. ; Seki, Y.

Author_Institution

Fuji Electr. Co. Ltd., Nagano, Japan

fYear

2000

fDate

2000

Firstpage

359

Lastpage

362

Abstract

This paper presents the noise emission mechanism from IGBT module, which is strongly required to be improved because of EMC regulations. The various 600 V/100 A IGBT module structures were experimentally and numerically tested to improve the current ringing during low current turn-on. As a result, it has been found that the parasitic inductance in the module should be as small as possible to suppress RLC resonant, which consists of parasitic components in the module and the capacitance in the power devices. It is also confirmed that the extra capacitance attached between gate-emitter of IGBT effectively improves the noise emission without increase the switching loss

Keywords

insulated gate bipolar transistors; power transistors; semiconductor device noise; 100 A; 600 V; EMC; IGBT module; RLC resonance; current ringing; gate emitter capacitance; low current turn-on; noise emission; parasitic inductance; power device; switching loss; Electromagnetic compatibility; Frequency; Inductance; Insulated gate bipolar transistors; Inverters; Multichip modules; Noise generators; Noise measurement; Parasitic capacitance; Semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on

Conference_Location

Toulouse

ISSN

1063-6854

Print_ISBN

0-7803-6269-1

Type

conf

DOI

10.1109/ISPSD.2000.856843

Filename

856843