Title :
Analysis on the low current turn-on behavior of IGBT module
Author :
Momota, S. ; Otsuki, M. ; Ishii, K. ; Takubo, H. ; Seki, Y.
Author_Institution :
Fuji Electr. Co. Ltd., Nagano, Japan
Abstract :
This paper presents the noise emission mechanism from IGBT module, which is strongly required to be improved because of EMC regulations. The various 600 V/100 A IGBT module structures were experimentally and numerically tested to improve the current ringing during low current turn-on. As a result, it has been found that the parasitic inductance in the module should be as small as possible to suppress RLC resonant, which consists of parasitic components in the module and the capacitance in the power devices. It is also confirmed that the extra capacitance attached between gate-emitter of IGBT effectively improves the noise emission without increase the switching loss
Keywords :
insulated gate bipolar transistors; power transistors; semiconductor device noise; 100 A; 600 V; EMC; IGBT module; RLC resonance; current ringing; gate emitter capacitance; low current turn-on; noise emission; parasitic inductance; power device; switching loss; Electromagnetic compatibility; Frequency; Inductance; Insulated gate bipolar transistors; Inverters; Multichip modules; Noise generators; Noise measurement; Parasitic capacitance; Semiconductor device noise;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856843
