Optimizing 600 V punchthrough IGBT´s for unclamped inductive switching (UIS)

Author

Yedinak, J. ; Wood, B. ; Shenoy, P. ; Dolny, G. ; Lange, D. ; Morthorst, T.

Author_Institution

Discrete Power Product Dev., Intersil Corp., Mountaintop, PA, USA

fYear

2000

fDate

2000

Firstpage

363

Lastpage

366

Abstract

In this paper, we analyze the UIS capability of punchthrough (PT) IGBTs both experimentally, and through non-isothermal two-dimensional numerical simulations. It is shown that the UIS failure mechanism is determined by the open-base p-n-p structure inherent in the IGBT. By optimizing the open base p-n-p, avalanche induced second breakdown can be prevented at current densities in excess of 1000 A/cm². A 600 V PT-IGBT with low on-state voltage, fast switching, and >4.5 J/cm² UIS capability at 120 A/cm² is experimentally demonstrated

Keywords

avalanche breakdown; insulated gate bipolar transistors; power semiconductor switches; power transistors; semiconductor device breakdown; 600 V; avalanche induced second breakdown; current density; failure mode; nonisothermal two-dimensional numerical simulation; on-state voltage; open-base p-n-p structure; punchthrough IGBT; unclamped inductive switching; Avalanche breakdown; Current density; Current measurement; Density measurement; Electric breakdown; Gain measurement; Insulated gate bipolar transistors; Product development; Stress; Switched-mode power supply;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on

Conference_Location

Toulouse

ISSN

1063-6854

Print_ISBN

0-7803-6269-1

Type

conf

DOI

10.1109/ISPSD.2000.856844

Filename

856844