Title :
Optimizing 600 V punchthrough IGBT´s for unclamped inductive switching (UIS)
Author :
Yedinak, J. ; Wood, B. ; Shenoy, P. ; Dolny, G. ; Lange, D. ; Morthorst, T.
Author_Institution :
Discrete Power Product Dev., Intersil Corp., Mountaintop, PA, USA
Abstract :
In this paper, we analyze the UIS capability of punchthrough (PT) IGBTs both experimentally, and through non-isothermal two-dimensional numerical simulations. It is shown that the UIS failure mechanism is determined by the open-base p-n-p structure inherent in the IGBT. By optimizing the open base p-n-p, avalanche induced second breakdown can be prevented at current densities in excess of 1000 A/cm2. A 600 V PT-IGBT with low on-state voltage, fast switching, and >4.5 J/cm2 UIS capability at 120 A/cm2 is experimentally demonstrated
Keywords :
avalanche breakdown; insulated gate bipolar transistors; power semiconductor switches; power transistors; semiconductor device breakdown; 600 V; avalanche induced second breakdown; current density; failure mode; nonisothermal two-dimensional numerical simulation; on-state voltage; open-base p-n-p structure; punchthrough IGBT; unclamped inductive switching; Avalanche breakdown; Current density; Current measurement; Density measurement; Electric breakdown; Gain measurement; Insulated gate bipolar transistors; Product development; Stress; Switched-mode power supply;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856844
