DocumentCode :
2239648
Title :
High density, sub 10 m Ohm Rdson 100 volt N-channel FETs for automotive applications
Author :
Sobhani, Saed ; Kinzer, Dan ; Ma, Ling ; Asselanis, Dino
Author_Institution :
Int. Rectifier Corp., El Segundo, CA, USA
fYear :
2000
fDate :
2000
Firstpage :
373
Lastpage :
376
Abstract :
Presented in this paper are the results of high-density trench designs in producing extremely low Rdson MOSFETs in the 100 VN voltage class. R.A. products of 110 mΩ.mm2 and 125 mΩ.mm2 (depending on design) at 10 V gate are the lowest reported in the industry. The incentive behind this work is to address the rising need of this class of MOSFETs in Automotive applications
Keywords :
automotive electronics; power MOSFET; 10 mohm; 100 V; N-channel FET; automotive electronics; high-density trench design; power MOSFET; Automobiles; Automotive applications; Electric breakdown; FETs; Packaging; Rectifiers; Surges; Thermal management; Topology; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
ISSN :
1063-6854
Print_ISBN :
0-7803-6269-1
Type :
conf
DOI :
10.1109/ISPSD.2000.856846
Filename :
856846
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2239648
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