A 0.35 μm trench gate MOSFET with an ultra low on state resistance and a high destruction immunity during the inductive switching

Author

Narazaki, A. ; Maruyama, J. ; Kayumi, T. ; Hamachi, H. ; Moritani, J. ; Hine, S.

Author_Institution

Ryouden Semicond. Syst. Eng. Corp., Fukuoka, Japan

fYear

2000

fDate

2000

Firstpage

377

Lastpage

380

Abstract

This paper describes performance of 20 V class N-channel MOSFET using 0.35 μm trench gate structure. It has two characteristics mainly. The first is an ultra low on state resistance by shrinking the trench gate width and increasing cell densities. The other is a high destruction immunity during the inductive switching by optimizing a trench depth. The measured specific on-resistance (Ron,sp) is 25% reduction comparing conventional one. Furthermore, this device can provide high avalanche current density during the inductive switching of JD=30 A/mm²

Keywords

field effect transistor switches; power MOSFET; power semiconductor switches; 0.35 micron; 20 V; N-channel MOSFET; avalanche current density; destruction immunity; inductive switching; on-state resistance; trench gate structure; Application software; Batteries; Current density; DC-DC power converters; Digital cameras; Electrical resistance measurement; MOSFET circuits; Power MOSFET; Switching circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on

Conference_Location

Toulouse

ISSN

1063-6854

Print_ISBN

0-7803-6269-1

Type

conf

DOI

10.1109/ISPSD.2000.856847

Filename

856847