Title :
Optical properties of J-shape ridge waveguide with trench structure for superluminescent diode using InAs/InGaAs quantum-dot active layer
Author :
Young-Chae Yoo ; Kim, Kyoung-Chan ; Yoon, Hong ; Jung, Jung-Hwa ; Jeong, Jin-Wook ; Lee, Jung-Il ; Kim, Gil-Ho ; Han, Il-Ki
Author_Institution :
Nano Device Res. Center, Korea Inst. of Sci. & Technol., Seoul
Abstract :
J-shape ridge waveguide with trench for superluminescent diode using InAs/InGaAs quantum-dot active layer was designed and fabricated. The following performance was realized under CW operation: above 80 mW output power at 900 mA, and about 45 nm 3-dB spectral bandwidth.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical waveguides; ridge waveguides; semiconductor quantum dots; superluminescent diodes; InAs/InGaAs quantum-dot active layer; J-shape ridge waveguide; current 900 mA; optical properties; superluminescent diode; trench structure; Bandwidth; Indium gallium arsenide; Optical distortion; Optical losses; Optical refraction; Optical variables control; Optical waveguides; Power generation; Quantum dots; Superluminescent diodes;
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
DOI :
10.1109/CLEOPR.2007.4391212
