Title :
Characteristics of InGaAs/InGaAsP/InP Quantum Dot Semiconductor Optical Amplifiers
Author :
Pyun, S.H. ; Jeong, W.G. ; Ko, D.G. ; Yoon, J.H. ; Jang, J.W. ; Kim, N.J. ; Oh, J.M. ; Lee, D.
Author_Institution :
Dept. of Mater. Eng., Sungkyunkwan Univ., Suwon
Abstract :
InGaAs/InGaAsP/InP quantum dots (QDs) semiconductor optical amplifiers were fabricated and high performance was demonstrated. The fiber-to-fiber small signal gain of 22.5 dB and the saturation output power of 10 dBm were measured with a facet coupling loss of 7.2 dB.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; semiconductor optical amplifiers; fiber-to-fiber small signal gain; gain 22.5 dB; gain 7.2 dB; quantum dot semiconductor optical amplifiers; Gain measurement; Indium gallium arsenide; Indium phosphide; Loss measurement; Optical fiber losses; Power amplifiers; Power generation; Power measurement; Quantum dots; Semiconductor optical amplifiers;
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
DOI :
10.1109/CLEOPR.2007.4391214
