DocumentCode
2239846
Title
Lasing Characteristics of InGaAs/InP Quantum Dot Lasers
Author
Pyun, S.H. ; Jeong, W.G. ; Ko, D.G. ; Yoon, J.H. ; Jang, J.W. ; Lee, E.G. ; Kim, N.J. ; Lee, D.
Author_Institution
Dept. of Mater. Eng., Sungkyunkwan Univ., Suwon
fYear
2007
fDate
26-31 Aug. 2007
Firstpage
1
Lastpage
2
Abstract
High performance InGaAs/InGaAsP/InP quantum dot lasers have been demonstrated. The cw operation up to 75degC has been achieved with the maximum external quantum efficiency of 44%, the output power of 160 mW. However, several peculiar behaviors have been observed caused by the inhomogeneity of the gain spectrum.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; continuous-wave operation; gain spectrum; inhomogeneous broadening; lasing characteristics; power 160 mW; quantum dot lasers; temperature 75 degC; Indium gallium arsenide; Indium phosphide; Optical materials; Power generation; Quantization; Quantum dot lasers; Substrates; Temperature; Threshold current; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location
Seoul
Print_ISBN
978-1-4244-1173-3
Electronic_ISBN
978-1-4244-1174-0
Type
conf
DOI
10.1109/CLEOPR.2007.4391215
Filename
4391215
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