Title :
Effects of Interruption on Surface Morphology for InAs/GaAs Quantum Dots´ Growth
Author :
Yuxin, Song ; Zhongyuan, Yu ; Yumin, Liu
Author_Institution :
Sch. ofSciences, Beijing Univ. of Posts & Telecommun., Beijing
Abstract :
Kinetic Monte Carlo simulations are applied on the epitaxial growth of self-assembled InAs quantum dots on GaAs substrate with periodic strain-relief patterns. We demonstrate that uniformly sized and regularly ordered island arrays can be obtained by controlling interruption time at the first sub-monolayer stage.
Keywords :
III-V semiconductors; Monte Carlo methods; epitaxial growth; gallium arsenide; gallium compounds; indium compounds; self-assembly; semiconductor quantum dots; surface morphology; InAs-GaAs; epitaxial growth; kinetic Monte Carlo simulations; periodic strain-relief patterns; self-assembled quantum dots; semiconductor quantum dots; surface morphology; Energy barrier; Epitaxial growth; Gallium arsenide; Kinetic theory; Quantum dot lasers; Quantum dots; Size control; Solid modeling; Substrates; Surface morphology;
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
DOI :
10.1109/CLEOPR.2007.4391216
