Title :
High sensitivity and temperature tolerant microelectronic O2 gas sensor
Author :
Gurbuz, Y. ; Kang, W.P. ; Davidson, J.L. ; Kerns, D.V. ; Henderson, B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA
Abstract :
A new diamond-based microelectronic gas sensor has been developed for the detection of O2 and CO gases. The gas sensing performance and detection mechanisms of the sensor for O2 and CO gases have been analyzed. The gas sensitivity of the sensor is high, repeatable, and reproducible. The response time is in seconds to a small concentration of O2 and CO gases. The gas detection mechanism of the new sensor is attributed to the change in the oxygen vacancies of the SnOx layer upon O2 and CO exposure. The new diamond-based microelectronic gas sensor could be applied for the detection of oxidizing and reducing gases over a higher and wider temperature range than currently possible
Keywords :
carbon compounds; diamond; gas sensors; high-temperature techniques; oxygen; semiconductor-insulator boundaries; tin compounds; vacancies (crystal); CO; CO gases; Catalyst/Adsorptive oxide/Insulator/Semiconductor device structure; O2; Pt-SnO-C; Pt/SnOx/i-diamond/p+-diamond CAIS; SnOx layer; diamond-based microelectronic gas sensor; gas detection; gas sensing performance; high sensitivity; oxidizing gases; oxygen vacancies; reducing gases; response time; temperature tolerant microelectronic O2 gas sensor; Actuators; Artificial intelligence; Computer aided instruction; Gas detectors; Microelectronics; Sensor phenomena and characterization; Steady-state; Temperature sensors; Transducers; Voltage;
Conference_Titel :
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-3829-4
DOI :
10.1109/SENSOR.1997.635267
