• DocumentCode
    2240568
  • Title

    CVD process for copper interconnection

  • Author

    Marcadal, C. ; Richard, E. ; Torres, J. ; Palleau, J. ; Madar, R.

  • Author_Institution
    CEA, Centre d´´Etudes Nucleaires de Grenoble, France
  • fYear
    1997
  • fDate
    16-19 March 1997
  • Firstpage
    15
  • Lastpage
    17
  • Abstract
    On the past few years, copper CVD has been intensively studied. Highly conformal deposition processes become necessary for the high aspect ratio expected at the deep submicron technology. The present work report promising results in the development of an Cu-CVD process suitable for industrial application in the 0.25 /spl mu/m device technology and below.
  • Keywords
    chemical vapour deposition; conformal coatings; copper; integrated circuit interconnections; 0.25 micron; CVD; Cu; aspect ratio; conformal deposition; copper interconnection; deep submicron technology; Adhesives; Chemical technology; Copper; Electric resistance; Frequency; Metallization; Morphology; Reproducibility of results; Telecommunications; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
  • Conference_Location
    Villard de Lans, France
  • ISSN
    1266-0167
  • Type

    conf

  • DOI
    10.1109/MAM.1997.621042
  • Filename
    621042
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2240568