Title :
CVD process for copper interconnection
Author :
Marcadal, C. ; Richard, E. ; Torres, J. ; Palleau, J. ; Madar, R.
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Grenoble, France
Abstract :
On the past few years, copper CVD has been intensively studied. Highly conformal deposition processes become necessary for the high aspect ratio expected at the deep submicron technology. The present work report promising results in the development of an Cu-CVD process suitable for industrial application in the 0.25 /spl mu/m device technology and below.
Keywords :
chemical vapour deposition; conformal coatings; copper; integrated circuit interconnections; 0.25 micron; CVD; Cu; aspect ratio; conformal deposition; copper interconnection; deep submicron technology; Adhesives; Chemical technology; Copper; Electric resistance; Frequency; Metallization; Morphology; Reproducibility of results; Telecommunications; Tin;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1997.621042
