Conformal copper deposition in deep trenches

Author

Bollmann, D. ; Merkel, R. ; Klumpp, A.

Author_Institution

Inst. fur Festkorpertechnol., Munchen, Germany

fYear

1997

fDate

16-19 March 1997

Firstpage

20

Lastpage

22

Abstract

For the use as metallization in CMOS device fabrication, we established a single wafer CVD copper deposition process with CupraSelect(R) (Schumacher) as precursor. Deposition was performed with a Delta 201 from Electrotech. We used a direct liquid injection system with an HPLC pump. The dependance of film properties upon pressure is described. In a certain pressure range, the CVD process is suitable for conformal filling of 18 /spl mu/m deep via holes with an aspect ratio of 10. The measured film resistivity is 1.95 u/spl Omega/cm as deposited and is reduced to 1.86 /spl mu//spl Omega/m after an annealing step.

Keywords

CMOS integrated circuits; chemical vapour deposition; conformal coatings; copper; integrated circuit metallisation; 1.95 to 1.86 muohmcm; 18 micron; CMOS device fabrication; Cu; CupraSelect precursor; Electrotech Delta 201; HPLC pump; annealing; aspect ratio; conformal copper deposition; deep trench; film resistivity; liquid injection; metallization; single wafer CVD; via hole; Argon; Chemical vapor deposition; Conductivity; Copper; Integrated circuit interconnections; Integrated circuit technology; Metallization; Pistons; Temperature; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop

Conference_Location

Villard de Lans, France

ISSN

1266-0167

Type

conf

DOI

10.1109/MAM.1997.621044

Filename

621044