DocumentCode :
2240671
Title :
Mode locked 1550 nm VECSEL using a two quantum wells GaInNAs Saturable Absorber
Author :
Khadour, A. ; Bouchoule, S. ; Aubin, G. ; Tourrenc, J.P. ; Miard, A. ; Harmand, J.C. ; Decobert, J. ; Oudar, J.L.
Author_Institution :
Lab. de Photonique et de Nanostruct., Marcoussis
fYear :
2008
fDate :
4-9 May 2008
Firstpage :
1
Lastpage :
2
Abstract :
We report a 2 GHz mode locked vertical external cavity surface emitting laser using a hybrid metal-metamorphic Bragg mirror on the gain structure with a resonant two quantum wells GaInNAs semiconductor saturable absorber mirror (SESAM).
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser mirrors; laser mode locking; optical saturable absorption; quantum well lasers; surface emitting lasers; GaInNAs; SESAM; VECSEL; hybrid metal-metamorphic Bragg mirror; laser gain structure; laser mode locking; quantum wells; semiconductor saturable absorber mirror; vertical external cavity surface emitting laser; wavelength 1550 nm; Gallium arsenide; Laser excitation; Laser mode locking; Mirrors; Pump lasers; Quantum well lasers; Semiconductor lasers; Substrates; Surface emitting lasers; Vertical cavity surface emitting lasers; (140.4050) Mode-locked lasers; (140.5960) Semiconductor lasers;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
Type :
conf
Filename :
4571647
Link To Document :
بازگشت