DocumentCode
2240690
Title
Influence of carrier gas on Cu nucleation, film properties and MOCVD reaction kinetics
Author
Röber, J. ; Riedel, S. ; Schulz, S.E. ; Gessner, T.
Author_Institution
Fakultat fur Elektrotech. und Informationstech., Tech. Univ. Chemnitz, Germany
fYear
1997
fDate
16-19 March 1997
Firstpage
25
Lastpage
26
Abstract
Copper CVD has been investigated for a few years as a key process for copper metallization technology among others because of its capability for high step coverage and low process temperatures. Beside low resistivity a high film growth rate, along with strong adhesion of the Cu film to the underlayer are essential for practical use in fabrication line. This paper presents the effect of carrier gas and precursor composition on the characteristics of copper MOCVD using the Cu(hfac)TMVS precursor.
Keywords
chemical vapour deposition; copper; metallic thin films; metallisation; nucleation; reaction kinetics; Cu; Cu(hfac)TMVS precursor; MOCVD reaction kinetics; adhesion; carrier gas; copper film; fabrication; growth; metallization; nucleation; resistivity; Additives; Argon; Conductivity; Copper; Hydrogen; Kinetic theory; MOCVD; Metallization; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location
Villard de Lans, France
ISSN
1266-0167
Type
conf
DOI
10.1109/MAM.1997.621046
Filename
621046
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