Title :
Optimization of the substrate parameters for EM-simulators
Author :
Korndörfer, F. ; Sischka, F.
Author_Institution :
IHP, Frankfurt (Oder), Germany
Abstract :
A technique for extraction and optimization of silicon substrate parameters is presented. The parameters are optimized to get the best fit between measured and simulated S-parameters for passive elements. Test structures were fabricated in a SiGe:C process with 5 metallization layers. The measurements were performed on-wafer. Loss and relative permittivity ¿r of each insulation layer is extracted and optimized separately.
Keywords :
Ge-Si alloys; S-parameters; carbon; electromagnetic fields; electromagnetic wave scattering; metallisation; optimisation; permittivity; SiGe:C; electromagnetic field simulators; metallization layers; optimization; passive elements; permittivity; silicon substrate parameters; simulated S-parameters; Capacitance measurement; Contact resistance; Dielectric measurements; Electrical resistance measurement; Performance evaluation; Permittivity measurement; Probes; Scanning electron microscopy; Scattering parameters; Testing; Optimization methods; calibrated EM-simulations; dielectric measurements; parameter estimation; scattering parameters measurement; simulation software;
Conference_Titel :
ARFTG Conference, 2007 69th
Conference_Location :
Honolulu, HI
Print_ISBN :
978-0-7803-9762-0
Electronic_ISBN :
978-0-7803-9763-7
DOI :
10.1109/ARFTG.2007.5456329
