DocumentCode :
2240865
Title :
First indirectly diode pumped Yb:SFAP laser, reaching the watt level at 985 nm
Author :
Castaing, Marc ; Balembois, Francois ; Georges, Patrick ; Georges, Thierry ; Schaffers, Kathleen ; Tassano, John
Author_Institution :
Lab. Charles Fabry de l´´Inst. d´´Opt., Univ. Paris-Sud, Palaiseau
fYear :
2008
fDate :
4-9 May 2008
Firstpage :
1
Lastpage :
2
Abstract :
We present the first demonstration of the three-level-laser transition at 985 nm in an Yb:S-FAP crystal intracavity pumped at 914 nm. We obtained 940 mW output power at 985 nm for 20 W incident pump power at 808 nm.
Keywords :
laser transitions; optical pumping; solid lasers; Sr5(PO4)3F:Yb; crystal intracavity; diode pumped laser; power 20 W; three-level-laser transition; wavelength 985 nm; Crystals; Erbium-doped fiber lasers; Laser excitation; Laser transitions; Neodymium; Power lasers; Pump lasers; Semiconductor diodes; Solid lasers; Ytterbium; (140.3480) Lasers, diode pumped; (140.3530) Lasers, neodymium; (140.3580) Lasers, solid-state; (140.3615) Lasers, Ytterbium;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
Type :
conf
Filename :
4571655
Link To Document :
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