• DocumentCode
    2240978
  • Title

    Ultra-low power fiber-coupled gallium arsenide photonic crystal cavity electro-optic modulator

  • Author

    Shambat, Gary ; Ellis, Bryan ; Majumdar, Arka ; Vuckovic, Jelena

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate electro-optic modulation in a GaAs laterally doped photonic crystal cavity diode with ultra-low switching energy of several fJ/bit. A short non-radiative carrier lifetime allows fast switching with an upper threshold of 100 GHz.
  • Keywords
    III-V semiconductors; carrier lifetime; electro-optical modulation; gallium arsenide; photonic crystals; GaAs; electro-optic modulation; frequency 100 GHz; laterally doped photonic crystal cavity diode; nonradiative carrier lifetime; ultra-low power fiber-coupled gallium arsenide photonic crystal cavity electro-optic modulator; ultra-low switching energy; Cavity resonators; Electrooptic modulators; Electrooptical waveguides; Gallium arsenide; Optical fiber dispersion; Photonic crystals;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950650
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2240978