OMCVD TiN diffusion barrier for copper contact and via/interconnects structures

Author

Marcadal, C. ; Richard, E. ; Torres, J. ; Palleau, J. ; Ulmer, L. ; Perroud, L.

Author_Institution

Lab d´´Electron. et de Technol. de l´´Inf., CEA, Centre d´´Etudes Nucleaires de Grenoble, France

fYear

1997

fDate

16-19 March 1997

Firstpage

54

Lastpage

55

Abstract

Titanium nitride (TiN) layers are currently used both as diffusion barriers and as glue layers for poorly adhering materials in the semiconductor industry. Until recently titanium nitride was deposited by PVD method with a poor step coverage. Some TiN CVD methods were developed but present drawbacks (chlorides contamination, high resistivity). A new CVD process is now developed with a desirable step coverage and a low resistivity. This one consists of a sequential OMCVD-plasma treatment process allowing a deposition of films with resistivity lower than 300 /spl mu//spl Omega/.cm. The present paper deals with TiN performances as barrier materials for copper integration in dual damascene architecture.

Keywords

chemical vapour deposition; copper; diffusion barriers; electrical resistivity; integrated circuit interconnections; integrated circuit metallisation; titanium compounds; 300 ohmcm; Cu-TiN; OMCVD; diffusion barrier; dual damascene architecture; plasma treatment process; resistivity; step coverage; via/interconnects structures; Atherosclerosis; Conductivity; Copper; Metallization; Microstructure; Semiconductor materials; Silicon; Stability; Tin; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop

Conference_Location

Villard de Lans, France

ISSN

1266-0167

Type

conf

DOI

10.1109/MAM.1997.621058

Filename

621058