DocumentCode :
2241221
Title :
Effects of stacking sequence of electrodeposited Sn and Bi layers on reflowed Sn-Bi solder alloys
Author :
Seen Fang Lee ; Yingxin Goh ; Haseeb, A.S.M.A.
Author_Institution :
Dept. of Mech. Eng., Univ. of Malaya, Kuala Lumpur, Malaysia
fYear :
2012
fDate :
6-8 Nov. 2012
Firstpage :
1
Lastpage :
6
Abstract :
Eutectic Sn-Bi alloy is gaining considerable attention in the electronic packaging applications. This alloy exhibits favorable properties such as low melting temperature, good wettability, high yield strength and fracture strength at room temperature. Miniaturization of electronic devices limited the choices of deposition technique where electrodeposition is identified as one of the most suitable ones. This work focuses on the formation of eutectic Sn-Bi solder alloys by reflowing a metal stack containing sequentially electrodeposited Sn and Bi layers. Three layer sequential deposition of Sn-Bi alloys is a new attempt in the electroplating field. The effects of layer sequence on the composition and microstructure of the resulting alloy is investigated. Irrespective of the layering sequence, a homogeneous microstructure is achieved after reflow. Near-eutectic alloy of composition Sn- 54.6 wt.% Bi is obtained from this sequential plating method.
Keywords :
bismuth alloys; electronics packaging; electroplating; eutectic alloys; fracture toughness; reflow soldering; solders; tin alloys; wetting; yield strength; Sn-Bi; electronic packaging application; eutectic solder alloy; fracture strength; layer sequence effect; low melting temperature; metal stack reflowing; microstructure; sequential electrodeposition technique; sequential electroplating field; stacking sequence effect; temperature 293 K to 298 K; wettability; yield strength;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Manufacturing Technology Symposium (IEMT), 2012 35th IEEE/CPMT International
Conference_Location :
Ipoh
ISSN :
1089-8190
Print_ISBN :
978-1-4673-4384-8
Electronic_ISBN :
1089-8190
Type :
conf
DOI :
10.1109/IEMT.2012.6521792
Filename :
6521792
Link To Document :
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