DocumentCode :
2241303
Title :
High-power BCB encapsulated VCSELs based on InP
Author :
Gruendl, T. ; Mueller, M. ; Geiger, K. ; Grasse, C. ; Boehm, G. ; Meyer, R. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Muenchen, Garching, Germany
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
The high temperature behavior of short cavity InP based VCSEL devices with 5.5 μm apertures is presented. They show record optical output powers and SMSRs beyond 50 dB over the whole temperature range.
Keywords :
III-V semiconductors; high-temperature effects; indium compounds; laser cavity resonators; organic compounds; semiconductor lasers; surface emitting lasers; InP; VCSEL; benzo-cyclo-butene; high temperature effects; high-power BCB encapsulation; optical output powers; short cavity based devices; side mode suppression ratio; size 5.5 mum; Cavity resonators; High speed optical techniques; Optical feedback; Optical fibers; Optical reflection; Optical variables control; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5950661
Link To Document :
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