• DocumentCode
    2241331
  • Title

    Analytical characterization of dead time in the zero-crossing region of the inductor current

  • Author

    Hobbs, I.K. ; Beukes, H.J. ; Koeslag, F.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Univ. of Stellenbosch, Stellenbosch, South Africa
  • fYear
    2009
  • fDate
    23-25 Sept. 2009
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    This paper presents a method for characterizing the average error voltage in the zero-crossing region of the inductor current during the dead time. The analysis makes use of an existing analytical solution to model the reverse recovery of the power diodes in this region. The proposed analytical solution is verified by experimental results.
  • Keywords
    inductors; power semiconductor diodes; inductor current; power diodes; reverse recovery; zero-crossing region; Africa; Analytical models; Circuit topology; Diodes; Harmonic distortion; Inductors; Insulated gate bipolar transistors; Inverters; Power engineering and energy; Voltage; Compensation; Dead Time; Inverter;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    AFRICON, 2009. AFRICON '09.
  • Conference_Location
    Nairobi
  • Print_ISBN
    978-1-4244-3918-8
  • Electronic_ISBN
    978-1-4244-3919-5
  • Type

    conf

  • DOI
    10.1109/AFRCON.2009.5308123
  • Filename
    5308123