Title :
Temperature insensitive 1305 nm InGaAs/GaAs quantum dot distributed feedback lasers
Author :
Gerschutz, F. ; Fischer, M. ; Koeth, J. ; Krestnikov, I. ; Kovsh, A. ; Forchel, A.
Author_Institution :
Nanoplus Nanosystems & Technol. GmbH, Gerbrunn
Abstract :
Based on high quality p-modulation doped InGaAs/GaAs quantum dot (QD) material we realized highly temperature stable operation of distributed feedback (DFB) lasers in the temperature range from 25degC to 85degC.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser beams; laser stability; optical modulation; quantum dot lasers; thermal stability; InGaAs-GaAs; high quality p-modulation; high temperature stable operation; semiconductor quantum dot distributed feedback lasers; temperature 25 C to 85 C; temperature insensitive DFB lasers; wavelength 1305 nm; Distributed feedback devices; Gallium arsenide; Indium gallium arsenide; Laser feedback; Laser modes; Laser stability; Optical materials; Quantum dot lasers; Quantum well lasers; Temperature distribution; (140.3490) Lasers, distributed-feedback; (230.5590) Quantum-well, -wire and -dot devices;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
