Title :
Room temperature GaAs/AlGaAs quantum cascade lasers with InGaP and InAlP waveguides
Author :
Revin, D.G. ; Atkins, C.N. ; Commin, J.P. ; Cockburn, J.W. ; Qiu, Y. ; Walther, T. ; Kennedy, K. ; Krysa, A.B.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Sheffield, Sheffield, UK
Abstract :
We report the development of high temperature pulsed GaAs/AlGaAs quantum cascade lasers emitting in the wavelength range of 9 μm with threshold current density as low as 4.3 kA/cm2 at 300K.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical waveguides; quantum cascade lasers; GaAs-AlGaAs; InAlP; InGaP; high temperature pulsed quantum cascade lasers; optical waveguides; temperature 293 K to 298 K; temperature 300 K; wavelength 9 mum; Gallium arsenide; Optical pulses; Optical refraction; Optical variables control; Optical waveguides; Quantum cascade lasers; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
