Modeling and Testing Comparison Faults of TCAMs with Asymmetric Cells

Author

Hu, Yong-Jyun ; Huang, Yu-Jen ; Li, Jin-Fu

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan

fYear

2009

fDate

3-7 May 2009

Firstpage

15

Lastpage

20

Abstract

Ternary content addressable memory (TCAM) is a key component in various applications for its fast lookup operation. Symmetric and asymmetric TCAM cells are two widely used cells for implementing a TCAM array. This paper presents several comparison fault models of TCAMs with asymmetric cells based on electrical defects. Some new comparison faults which do not exist in a TCAM with symmetric cells are found. A march-like test algorithm is also proposed to cover the defined comparison faults. The test algorithm consists of 8N Write operations and (3N + 2B) Compare operations for an N times B-bit TCAM with Hit output only.

Keywords

content-addressable storage; fault diagnosis; 8N Write operations; TCAM; asymmetric cell; electrical defect; fault model; march-like test algorithm; ternary content addressable memory; Associative memory; Decoding; Hardware; Logic; Prefetching; Random access memory; Routing; Signal generators; Testing; Very large scale integration; March-like test; Ternary Content Addressable memory; comparison faults; fault modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Test Symposium, 2009. VTS '09. 27th IEEE

Conference_Location

Santa Cruz, CA

ISSN

1093-0167

Print_ISBN

978-0-7695-3598-2

Type

conf

DOI

10.1109/VTS.2009.18

Filename

5116603