DocumentCode :
2241561
Title :
Crystal structure measured by nonlinear absorption using 3.1 μm femtosecond laser pulses
Author :
Kirkwood, Sean E. ; Golin, Sarah ; Chalus, Olivier ; Thai, Alexandre ; Biegert, Jens ; Klug, Dennis D. ; Rayner, David M. ; Corkum, Paul B.
Author_Institution :
Nat. Res. Council Canada, Ottawa, ON, Canada
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
Infrared multiphoton adsorption at 3.1 m in crystalline GaAs depends on the crystal alignment to the laser polarization. This reveals the roles electron mass and band structure play in multiphoton ionization inside solids.
Keywords :
III-V semiconductors; band structure; crystal structure; gallium arsenide; high-speed optical techniques; infrared spectra; light polarisation; measurement by laser beam; multiphoton processes; photoionisation; GaAs; band structure; crystal alignment; crystal structure; electron mass; femtosecond laser pulses; infrared multiphoton adsorption; laser polarization; multiphoton ionization; nonlinear absorption; wavelength 3.1 mum; Atomic measurements; Crystals; Extraterrestrial measurements; Ionization; Measurement by laser beam; Photonic band gap; Semiconductor device measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5950673
Link To Document :
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