• DocumentCode
    2241561
  • Title

    Crystal structure measured by nonlinear absorption using 3.1 μm femtosecond laser pulses

  • Author

    Kirkwood, Sean E. ; Golin, Sarah ; Chalus, Olivier ; Thai, Alexandre ; Biegert, Jens ; Klug, Dennis D. ; Rayner, David M. ; Corkum, Paul B.

  • Author_Institution
    Nat. Res. Council Canada, Ottawa, ON, Canada
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Infrared multiphoton adsorption at 3.1 m in crystalline GaAs depends on the crystal alignment to the laser polarization. This reveals the roles electron mass and band structure play in multiphoton ionization inside solids.
  • Keywords
    III-V semiconductors; band structure; crystal structure; gallium arsenide; high-speed optical techniques; infrared spectra; light polarisation; measurement by laser beam; multiphoton processes; photoionisation; GaAs; band structure; crystal alignment; crystal structure; electron mass; femtosecond laser pulses; infrared multiphoton adsorption; laser polarization; multiphoton ionization; nonlinear absorption; wavelength 3.1 mum; Atomic measurements; Crystals; Extraterrestrial measurements; Ionization; Measurement by laser beam; Photonic band gap; Semiconductor device measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950673
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2241561