DocumentCode :
2241646
Title :
Mid-infrared broadband modulation instability and 50 dB Raman assisted parametric gain in silicon photonic wires
Author :
Liu, Xiaoping ; Kuyken, Bart ; Roelkens, Gunther ; Baets, Roel ; Vlasov, Yurii A. ; Osgood, Richard M., Jr. ; Green, William M J
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
We demonstrate broadband modulation instability, >; 40 dB parametric amplification with on-chip gain bandwidth >; 580 nm, and narrowband Raman-assisted peak on-chip gain exceeding 50 dB, using mid-infrared dispersion-engineered silicon nanophotonic wires.
Keywords :
Raman spectra; elemental semiconductors; integrated optics; nanophotonics; nonlinear optics; optical parametric amplifiers; optical parametric oscillators; silicon; Raman assisted parametric gain; mid-infrared broadband modulation instability; mid-infrared dispersion-engineered silicon nanophotonic wires; narrowband Raman-assisted peak on-chip gain; on-chip gain bandwidth; silicon photonic wires; Gain; Nonlinear optics; Optical waveguides; Silicon; Stimulated emission; System-on-a-chip; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5950677
Link To Document :
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