DocumentCode
2241728
Title
GaN defect photonic crystal membrane laser
Author
Lin, Cheng-Hung ; Shen, Kun-Ching ; Yeh, Dong-Ming ; Chen, Cheng-Yen ; Mu, Zen-Da ; Peng, Lung-Han ; Yang, C.C.
Author_Institution
Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
We report the lasing behaviors of a GaN defect photonic crystal membrane structure. The high Q factor and low threshold condition show the effective photon confinement with the full photonic band gap structure.
Keywords
III-V semiconductors; Q-factor; gallium compounds; membranes; photonic band gap; photonic crystals; semiconductor lasers; GaN; GaN defect; Q factor; photon confinement; photonic band gap; photonic crystal membrane laser; Biomembranes; Gallium nitride; Optical pumping; Photonic band gap; Photonic crystals; Plasma applications; Q factor; Semiconductor lasers; Superlattices; Wet etching; 140.3460 Lasers; 140.5960 Semiconductor lasers;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4571693
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