DocumentCode :
2241728
Title :
GaN defect photonic crystal membrane laser
Author :
Lin, Cheng-Hung ; Shen, Kun-Ching ; Yeh, Dong-Ming ; Chen, Cheng-Yen ; Mu, Zen-Da ; Peng, Lung-Han ; Yang, C.C.
Author_Institution :
Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei
fYear :
2008
fDate :
4-9 May 2008
Firstpage :
1
Lastpage :
2
Abstract :
We report the lasing behaviors of a GaN defect photonic crystal membrane structure. The high Q factor and low threshold condition show the effective photon confinement with the full photonic band gap structure.
Keywords :
III-V semiconductors; Q-factor; gallium compounds; membranes; photonic band gap; photonic crystals; semiconductor lasers; GaN; GaN defect; Q factor; photon confinement; photonic band gap; photonic crystal membrane laser; Biomembranes; Gallium nitride; Optical pumping; Photonic band gap; Photonic crystals; Plasma applications; Q factor; Semiconductor lasers; Superlattices; Wet etching; 140.3460 Lasers; 140.5960 Semiconductor lasers;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
Type :
conf
Filename :
4571693
Link To Document :
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