DocumentCode
2241770
Title
Anisotropy light extraction with high polarization ratio from photonic crystal light-emitting diodes
Author
Lai, Chun-Feng ; Kuo, Hao-Chung ; Lu, Tien-Chang ; Shing-Chung Wang ; Chao, C.H. ; Hsueh, H.T. ; Wang, Shing-Chung ; Yeh, W.Y. ; Chi, J.Y.
Author_Institution
Dept. of Photonics, Nat. Chiao-Tung Univ., Hsinchu
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
The azimuthal anisotropy of GaN photonic crystal light-emitting diode is investigated using an annular structure. The extracted light distribution has P/S ratio of 5.5 for light propagating in GammaX direction and 2.1 for GammaM direction.
Keywords
III-V semiconductors; gallium compounds; light emitting diodes; light polarisation; light propagation; photonic crystals; GaN; anisotropy light extraction; annular structure; azimuthal anisotropy; light distribution; light propagation; photonic crystal light-emitting diode; polarization ratio; Anisotropic magnetoresistance; Charge coupled devices; Dry etching; Gallium nitride; Lattices; Light emitting diodes; Optical polarization; Optical waveguides; Photonic crystals; Scanning electron microscopy; (230.3670) light-emitting diodes; (230.5298) photonic crystals;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4571695
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