All-optical on-chip memory based on ultra high Q InGaAsP photonic crystal nanocavity

Author

Shinya, Akihiko ; Matsuo, Shinji ; Yosia ; Tanabe, Takasumi ; Kuramochi, Eiichi ; Sato, Tomonari ; Kakitsuka, Takaaki ; Notomi, Masaya

Author_Institution

Basic Res. Labs., NTT, Atsugi

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

We demonstrate all-optical bistable memory operation with 1.3 Q-InGaAsP photonic crystal nanocavities based on refractive index modulation caused by carrier-induced nonlinearity. The minimum bias power for bistability is extremely low at a few tens of muW and the operating energy required for switching is only 30 fJ.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; nanoelectronics; nanostructured materials; optical bistability; optical modulation; optical storage; photonic crystals; refractive index; InGaAsP; all-optical bistable memory operation; all-optical on-chip memory; carrier-induced nonlinearity; energy 30 fJ; minimum bias power; refractive index modulation; ultra high Q photonic crystal nanocavities; Absorption; Hysteresis; Integrated optics; Optical bistability; Optical refraction; Optical variables control; Optical waveguides; Photonic crystals; Q factor; Refractive index; (050.5298) Photonic crystals; (130.3120) Integrated optics devices; (190.1450) Bistability;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4571696