Title :
Integration of a stack of two fluorine doped silicon oxide thin films with interconnect metallization for a sub-0.35 /spl mu/m inter-metal dielectric applications
Author :
Baud, L. ; Passemard, G. ; Gobil, Y. ; Saad, H.M. ; Corte, A. ; Pires, F. ; Fugler, P. ; Noel, P. ; Rabinzohn, P. ; Beinglass, I.
Author_Institution :
Appl. Mater., Meylan, France
Abstract :
Stable fluorine doped PETEOS and HDP-CVD silicon oxide thin films have been deposited without any capping layer. Gap-filling of 0.35 /spl mu/m metal spacing (2:1 A.R.) has been studied, and partial integration has been successfully achieved.
Keywords :
CVD coatings; dielectric thin films; fluorine; metallisation; plasma CVD coatings; silicon compounds; 0.35 micron; HDP-CVD; PETEOS; SiO/sub 2/:F; aspect ratio; fluorine doped silicon oxide thin film; gap filling; inter-metal dielectric; interconnect metallization; stack integration; Absorption; Annealing; Chemistry; Dielectric thin films; Metallization; Moisture; Performance evaluation; Semiconductor thin films; Silicon; Tensile stress;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1997.621061
