DocumentCode
2241858
Title
Optimizing the power confinement in silicon slot waveguides by use of Finite Element Method
Author
Leung, D.M.H. ; Kan, X.B. ; Rahman, B.M.A. ; Kejalakshmy, N. ; Grattan, K.T.V.
Author_Institution
Sch. of Eng. & Math. Sci., City Univ. London, Northampton, UK
fYear
2011
fDate
13-16 Nov. 2011
Firstpage
1
Lastpage
6
Abstract
In this paper, the power confinement and the power density in the slot region of a vertical and horizontal slot waveguide are optimized; full-vectorial H and E-field profiles along with Poynting vector are also shown for both of these silicon waveguides. Bending loss of such slot waveguides is also presented.
Keywords
bending; finite element analysis; integrated optics; optical losses; optical waveguides; silicon-on-insulator; Poynting vector; Si; bending loss; finite element method; full-vectorial E-field profiles; full-vectorial H-field profiles; horizontal slot waveguide; power confinement; power density; vertical slot waveguide; Abstracts; Educational institutions; TV; Nanophotonics and photonic crystal; Numerical approximation and analysis; Waveguides;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference and Exhibition, 2011. ACP. Asia
Conference_Location
Shanghai
ISSN
2162-108X
Print_ISBN
978-0-8194-8961-6
Type
conf
DOI
10.1117/12.904947
Filename
6210612
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