DocumentCode
2241931
Title
265 nm light emitting diodes on AlN single crystal substrates: Growth and characterization
Author
Collazo, Ramón ; Mita, Seiji ; Xie, Jinqiao ; Rice, Anthony ; Tweedie, James ; Dalmau, Rafael ; Moody, Baxter ; Schlesser, Raoul ; Kirste, Ronny ; Hoffmann, Axel ; Sitar, Zlatko
Author_Institution
Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
High crystalline quality A1N and pseudomorphic AlGaN films were deposited by metalorganic chemical vapor deposition on single crystal A1N substrates for the fabrication of a 265 nm light emitting diode with estimated IQE above 40%.
Keywords
MOCVD; aluminium compounds; gallium compounds; light emitting diodes; semiconductor thin films; wide band gap semiconductors; AlGaN; AlN; light emitting diodes; metalorganic chemical vapor deposition; pseudomorphic semiconductor films; single crystal substrates; wavelength 265 nm; Aluminum gallium nitride; Crystals; Doping; Films; Light emitting diodes; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5950687
Link To Document