DocumentCode :
2241931
Title :
265 nm light emitting diodes on AlN single crystal substrates: Growth and characterization
Author :
Collazo, Ramón ; Mita, Seiji ; Xie, Jinqiao ; Rice, Anthony ; Tweedie, James ; Dalmau, Rafael ; Moody, Baxter ; Schlesser, Raoul ; Kirste, Ronny ; Hoffmann, Axel ; Sitar, Zlatko
Author_Institution :
Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
High crystalline quality A1N and pseudomorphic AlGaN films were deposited by metalorganic chemical vapor deposition on single crystal A1N substrates for the fabrication of a 265 nm light emitting diode with estimated IQE above 40%.
Keywords :
MOCVD; aluminium compounds; gallium compounds; light emitting diodes; semiconductor thin films; wide band gap semiconductors; AlGaN; AlN; light emitting diodes; metalorganic chemical vapor deposition; pseudomorphic semiconductor films; single crystal substrates; wavelength 265 nm; Aluminum gallium nitride; Crystals; Doping; Films; Light emitting diodes; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5950687
Link To Document :
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