• DocumentCode
    2241953
  • Title

    Carrier dynamics in Al0.72Ga0.18N multiple quantum wells exhibiting varying internal quantum efficiencies

  • Author

    Garrett, Gregory A. ; Rotella, Paul ; Shen, Hongen ; Wraback, Michael ; Bhattacharyya, Anirban ; Moustakas, Theodore D. ; Hug, William

  • Author_Institution
    Sensors & Electron Devices Directorate, U.S. Army Res. Lab., Adelphi, MD, USA
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Time-resolved photoluminescence studies of Mid-UV AlGaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy reveal improved internal quantum efficiencies with increased carrier localization related to chemical ordering.
  • Keywords
    III-V semiconductors; aluminium compounds; light emitting diodes; molecular beam epitaxial growth; photoluminescence; wide band gap semiconductors; Al0.72Ga0.18N; carrier dynamics; carrier localization; chemical ordering; multiple quantum wells; plasma assisted molecular beam epitaxy; time resolved photoluminescence; varying internal quantum efficiencies; Aluminum gallium nitride; Charge carrier processes; Chemicals; Photoluminescence; Quantum well devices; Radiative recombination;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950688
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2241953