Title :
AlGaN-based deep ultraviolet LEDs by plasma assisted molecular beam epitaxy
Author :
Kao, Chen-Kai ; Liao, Yitao ; Thomidis, Christos ; Moldawer, Adam ; Bhattarai, Dipesh ; Sun, Haiding ; Moustakas, Theodore D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Boston Univ., Boston, MA, USA
Abstract :
We report the development of AlGaN-based deep UV LEDs by RF plasma-assisted MBE. Devices emitting at 273 nm were evaluated at bare-die configuration and found to have an output power of 1.3 mW at 100 mA injection current and external quantum efficiency of 0.4%.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; light emitting diodes; molecular beam epitaxial growth; plasma materials processing; ultraviolet sources; wide band gap semiconductors; AlGaN; RF plasma assisted MBE; bare die configuration; current 100 mA; deep ultraviolet LED; plasma assisted molecular beam epitaxy; power 1.3 mW; wavelength 273 nm; Aluminum gallium nitride; Light emitting diodes; Molecular beam epitaxial growth; Optical device fabrication; Power generation; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
