DocumentCode :
2242047
Title :
Abnormal polarization switching phenomenon in a-plane AlxGa1−xN
Author :
Huang, Huei-Min ; Huang, Hung-Hsun ; Wu, Yuh-Renn ; Lu, Tien-Chang ; Kuo, Hao-Chung ; Wang, Shing-Chung
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
The α-plane AlxGax-xN layers show abnormal optical polarization switching behavior. This phenomenon can be well characterized by the assumption of the lambertian-like radiation pattern and simulated by utilizing the 6 X 6 k · p model.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; light polarisation; wide band gap semiconductors; AlxGa1-xN; abnormal optical polarization switching behavior; abnormal polarization switching phenomenon; lambertian-like radiation pattern; Dispersion; Optical films; Optical polarization; Optical switches; Spontaneous emission; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5950691
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2242047
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