Title :
Integration evaluation of low permittivity silicon based spin on materials as IMD
Author :
Pires, F. ; Noël, P. ; Lecornec, Ch ; Passemard, G.
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Grenoble, France
Abstract :
The integration capability of non-etchback Silicon Based Spin on Materials has been studied. The via poisoning effect due to the resist stripping was particularly evaluated. The metal barrier adhesion and the dielectric constant evolution after the chemical treatment were also evaluated. Some solutions to integrate these materials were proposed.
Keywords :
dielectric thin films; metallisation; permittivity; silicon compounds; chemical treatment; dielectric constant; integration; intermetal dielectric; metal barrier adhesion; permittivity; resist stripping; silicon based spin on material; via poisoning; Adhesives; Dielectric constant; Dielectric materials; Permittivity; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma measurements; Resists; Silicon;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1997.621062
