Title :
Parallel implementations of transition fault simulation on computational RAM (C·RAM)
Author :
Cockburn, Bruce F. ; Kwong, Albert L C ; Elliott, Duncan G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Alberta Univ., Edmonton, Alta., Canada
Abstract :
Stuck-at faults and transition faults model how physical defects can disturb the proper operation of digital circuits. Two transition faults that are commonly considered are gate delay faults, where an unexpected lumped delay is associated with a gate input or output, and CMOS transistor stuck-open faults, where low-to-high or high-to-low output transitions cannot occur for certain input combinations to a gate. Fault simulation is the computationally intensive process of determining the proportion of faults that would be detected if a given sequence of test patterns were to be applied to a given circuit. The paper describes how a conventional parallel fault simulation algorithm for stuck-at, gate delay and stuck-open faults was adapted to exploit the massive single instruction multiple data (SIMD) parallelism available in the computational RAM (C·RAM) architecture
Keywords :
digital simulation; logic CAD; logic arrays; logic testing; parallel algorithms; parallel architectures; random-access storage; C RAM architecture; CMOS transistor stuck-open faults; SIMD parallelism; computational RAM; computationally intensive process; digital circuits; fault simulation; gate delay faults; gate input; input combinations; massive single instruction multiple data; parallel fault simulation algorithm; parallel implementations; physical defects; stuck-at faults; stuck-open faults; test patterns; transition fault simulation; transition faults; unexpected lumped delay; Circuit faults; Circuit simulation; Circuit testing; Computational modeling; Delay; Digital circuits; Electrical fault detection; Fault detection; Parallel processing; Semiconductor device modeling;
Conference_Titel :
Electrical and Computer Engineering, 1998. IEEE Canadian Conference on
Conference_Location :
Waterloo, Ont.
Print_ISBN :
0-7803-4314-X
DOI :
10.1109/CCECE.1998.682536