Title :
High-speed SiGe p-i-n W-structure photodetectors at telecommunication wavelengths grown directly on Si
Author :
Ali, Dyan ; Thompson, Phillip ; Goldhar, Julius ; DiPasquale, Joseph, III ; Richardson, Christopher J.K.
Author_Institution :
Lab. for Phys. Sci., Univ. of Maryland, College Park, MD
Abstract :
We report on Si-rich Si1-xGex p-i-n W-structure single-mode waveguide detectors of varying lengths, and found to have a responsivity of upto 489 muAW-1mm-1. The shortest tested devices exhibit a 1.74 GHz bandwidth, and 173.5 muA/W responsitivty at 1.3 mum.
Keywords :
Ge-Si alloys; optical receivers; optical testing; optical waveguides; photodetectors; SiGe; SiGe p-i-n W-structure; bandwidth 1.74 GHz; photodetector; single-mode waveguide detector; telecommunication wavelength; wavelength 1.3 mum; Absorption; Bandwidth; Germanium silicon alloys; High speed optical techniques; Optical buffering; Optical materials; Optical waveguides; PIN photodiodes; Photodetectors; Silicon germanium; (040:6040) Detectors, Silicon; (160.4670) Optical materials;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
