DocumentCode
2242204
Title
Comparison of comb-line generation from InGaAsP/InP integrated ring mode-locked lasers
Author
Parker, John S. ; Binetti, Pietro R A ; Bhardwaj, Ashish ; Guzzon, Robert S. ; Norberg, Erik J. ; Hung, Yung-Jr ; Coldren, Larry A.
Author_Institution
Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
We compare comb-line generation from a 30 GHz gain flattened ring mode-locked laser and two standard 30 GHz ring mode-locked lasers. The gain flattened ring has a 1.32 THz spectral width whereas the other devices have 420 and 630 GHz spectral widths.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; optical pulse generation; ring lasers; semiconductor lasers; spectral line breadth; InGaAsP-InP; comb-line generation; frequency 30 GHz; gain flattened ring; integrated ring mode-locked lasers; spectral width; Gain; Indium phosphide; Integrated optics; Laser mode locking; Optical filters; Optical transmitters; Ring lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5950698
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