Title :
AlGaN/GaN multiple quantum wells grown by atomic layer deposition
Author :
Lo, M.H. ; Chen, S.W. ; Li, Z.Y. ; Lu, T.C. ; Kuo, H.C. ; Wang, S.C.
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu
Abstract :
Three-pair AlGaN/GaN multiple quantum well structure with superlattice was grown using metal-organic chemical vapor deposition system. The AlGaN barrier and GaN well of the MQW were grown by atomic layer deposition and conventional growth, respectively.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; atomic layer deposition; gallium compounds; semiconductor growth; semiconductor quantum wells; semiconductor superlattices; surface morphology; wide band gap semiconductors; AlGaN-GaN; atomic layer deposition; barrier layer; conventional growth; metal-organic chemical vapor deposition system; multiple quantum well structure; superlattice; surface morphology; Aluminum gallium nitride; Atomic layer deposition; Gallium nitride; Laser sintering; Metallic superlattices; Optical pumping; Optical sensors; Optical superlattices; Quantum well devices; Surface morphology; (250.5590) Quantum-well, -wire and -dot devices; (310.3840) Materials and process characterization;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
