• DocumentCode
    2242343
  • Title

    SiOF and SiO2 deposition in a HDP reactor: tool characterisation and film analysis

  • Author

    den Boer, D.J. ; Fukuda, H. ; van der Hilst, J.B.C. ; Kalkman, A.J. ; Janssen, G.C.A.M. ; Radelaar, S.

  • Author_Institution
    Delft Univ., Netherlands
  • fYear
    1997
  • fDate
    16-19 March 1997
  • Firstpage
    71
  • Lastpage
    73
  • Abstract
    High Density Plasma (HDP) reactors are currently introduced for the deposition of SiO/sub 2/ and SiOF in submicron gaps between aluminium conductors in advanced integrated circuits. The main feature of HDP reactors is the ability to fill high aspect ratio spaces between aluminium conductors. This feature is achieved by employing a simultaneous deposition and sputtering process.
  • Keywords
    dielectric thin films; integrated circuit metallisation; plasma deposition; silicon compounds; HDP reactor; SiO/sub 2/; SiOF; aluminium conductor; aspect ratio; dielectric film; high density plasma deposition; integrated circuit; intermetal dielectric; sputtering; Aluminum; Conductors; Dielectric materials; Filling; Inductors; Inorganic materials; Metallization; Plasma applications; Plasma density; Sputtering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
  • Conference_Location
    Villard de Lans, France
  • ISSN
    1266-0167
  • Type

    conf

  • DOI
    10.1109/MAM.1997.621063
  • Filename
    621063
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2242343