Title :
SiOF and SiO2 deposition in a HDP reactor: tool characterisation and film analysis
Author :
den Boer, D.J. ; Fukuda, H. ; van der Hilst, J.B.C. ; Kalkman, A.J. ; Janssen, G.C.A.M. ; Radelaar, S.
Author_Institution :
Delft Univ., Netherlands
Abstract :
High Density Plasma (HDP) reactors are currently introduced for the deposition of SiO/sub 2/ and SiOF in submicron gaps between aluminium conductors in advanced integrated circuits. The main feature of HDP reactors is the ability to fill high aspect ratio spaces between aluminium conductors. This feature is achieved by employing a simultaneous deposition and sputtering process.
Keywords :
dielectric thin films; integrated circuit metallisation; plasma deposition; silicon compounds; HDP reactor; SiO/sub 2/; SiOF; aluminium conductor; aspect ratio; dielectric film; high density plasma deposition; integrated circuit; intermetal dielectric; sputtering; Aluminum; Conductors; Dielectric materials; Filling; Inductors; Inorganic materials; Metallization; Plasma applications; Plasma density; Sputtering;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1997.621063
