Title :
Effect of ion-irradiation-induced defect on the optically active Er ions in Er-doped silicon-rich silicon oxide
Author :
Jeong, Hoon ; Seo, Se-Young Young ; Shin, Jung H.
Author_Institution :
Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Daejeon
Abstract :
The effect of ion-irradiation induced defect on the optically active Er3+ ions in Er doped silicon-rich silicon oxide (SRSO) film is investigated. We find that the initial presence of defects strongly reduces the fraction of Er ions that can be excited via nc-Si even after their removal via high-temperature annealing.
Keywords :
annealing; ion beam effects; optical films; photoluminescence; Er; Er-doped silicon-rich silicon oxide film; high-temperature annealing; ion-irradiation-induced defect; optically active ions; Annealing; Erbium; Luminescence; Microstructure; Optical films; Optical sensors; Particle beam optics; Semiconductor films; Silicon; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
DOI :
10.1109/CLEOPR.2007.4391346
