Embedded DC-DC Voltage Down Converter for Low-Power VLSI Chip

Author

Zhou, Qianneng ; Lai, Fengchang ; Yu, Mingyan

Author_Institution

Microelectron. Center, Harbin Inst. of Technol.

fYear

2006

fDate

4-7 Dec. 2006

Firstpage

670

Lastpage

673

Abstract

A fully integrated DC-DC voltage down converter (VDC) is proposed. Employing a bias voltage generator and a PMOS pass device with forward-biased source-to-bulk circuit, the architecture of the proposed VDC is simple and can be fabricated by conventional CMOS technology. VDC converts 3.3V to lower voltage so that the internal circuits of VLSI are used. In this paper, 1.8V is used as an experiment vehicle. For a given size of PMOS pass device, the circuit achieves approximately a large output current improvement over its nonforward-biased state. The output voltage of VDC has characteristics such as a temperature dependency of only 0.543mV/degC and a voltage deviation within plusmn0.42% for plusmn10% variation of supply voltage. The output voltage is stabilized with plusmn3.8mV for load current varying from 0 to 100mA

Keywords

CMOS integrated circuits; DC-DC power convertors; VLSI; embedded systems; low-power electronics; 0 to 100 mA; 1.8 to 3.3 V; CMOS technology; PMOS pass device; VLSI; bias voltage generator; voltage down converter; CMOS technology; Circuit analysis; DC-DC power converters; Differential amplifiers; Integrated circuit technology; Microelectronics; Temperature dependence; Vehicles; Very large scale integration; Voltage; CMOS; forward-biased source-to-bulk; reference voltage generator; voltage down converter (VDC);

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2006. APCCAS 2006. IEEE Asia Pacific Conference on

Conference_Location

Singapore

Print_ISBN

1-4244-0387-1

Type

conf

DOI

10.1109/APCCAS.2006.342096

Filename

4145482