• DocumentCode
    2243093
  • Title

    Optical characterization of semipolar GaN light-emitting diodes on sapphire

  • Author

    Leung, Benjamin ; Zhang, Yu. ; Sun, Qian ; Yerino, Christopher ; Chen, Zhen ; Lester, Steve ; Liao, Kuan-Yung ; Li, Yun-Li ; Han, Jung

  • Author_Institution
    Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Semipolar (11-22) GaN light-emitting diodes are grown on sapphire substrates by orientation controlled epitaxy. Optical emission properties are investigated, and narrow linewidth emission is shown for devices on this low dislocation density template.
  • Keywords
    III-V semiconductors; dislocations; epitaxial growth; gallium compounds; light emitting diodes; sapphire; wide band gap semiconductors; Al2O3; GaN; dislocation density template; narrow linewidth emission; optical characterization; optical emission properties; orientation controlled epitaxy; sapphire substrates; semipolar light-emitting diodes; Gallium nitride; Light emitting diodes; Optical device fabrication; Optical polarization; Quantum well devices; Stimulated emission; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950732
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2243093