Title :
Optical characterization of semipolar GaN light-emitting diodes on sapphire
Author :
Leung, Benjamin ; Zhang, Yu. ; Sun, Qian ; Yerino, Christopher ; Chen, Zhen ; Lester, Steve ; Liao, Kuan-Yung ; Li, Yun-Li ; Han, Jung
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Abstract :
Semipolar (11-22) GaN light-emitting diodes are grown on sapphire substrates by orientation controlled epitaxy. Optical emission properties are investigated, and narrow linewidth emission is shown for devices on this low dislocation density template.
Keywords :
III-V semiconductors; dislocations; epitaxial growth; gallium compounds; light emitting diodes; sapphire; wide band gap semiconductors; Al2O3; GaN; dislocation density template; narrow linewidth emission; optical characterization; optical emission properties; orientation controlled epitaxy; sapphire substrates; semipolar light-emitting diodes; Gallium nitride; Light emitting diodes; Optical device fabrication; Optical polarization; Quantum well devices; Stimulated emission; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
