Title :
On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms
Author :
Dai, Qi ; Shan, Qifeng ; Cho, Jaehee ; Schubert, E.Fred ; Crawford, Mary H. ; Koleske, Daniel D. ; Kim, Min-Ho ; Park, YongJo
Author_Institution :
Dept. of Phys., Appl. Phys. & Astron., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
The ABC model (without and with phase-space filling) predicts IQE-versus-n curves of GalnN light-emitting diodes that have even symmetry. Analysis of IQE-versus-n curves shows the need for a carrier leakage term to explain the droop.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; quantum well devices; semiconductor quantum dots; wide band gap semiconductors; GaInN-GaN; carrier leakage term; droop-causing mechanisms; efficiency-versus-carrier-concentration curves; light-emitting diodes; Filling; Fitting; Light emitting diodes; Modeling; Physics; Predictive models; USA Councils;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
