DocumentCode
2243113
Title
Effect of nitride passivation on the Si nanocluster-Er coupling and Er optical activity
Author
Yang, Moon-Seung ; Kim, Kyung-Joong ; Shin, Jung H.
Author_Institution
Dept. of Phys., KAIST, Daejeon
fYear
2007
fDate
26-31 Aug. 2007
Firstpage
1
Lastpage
2
Abstract
We have investigated the Er3+ photoluminescence (PL) properties from Er doped Si-rich Si nitride (SRSN) films. Based on a comparison with Er doped Si-rich Si oxide (SRSO) films, breaking of nc-Si / Er coupling and Er deactivation in Er doped SRSN film are strongly reduced. We suggest that SRSN can be an effective alternative to SRSO for obtaining efficient Er activity.
Keywords
erbium; passivation; photoluminescence; silicon compounds; Er deactivation; Si nanocluster-Er coupling; SiN:Er; SiO:Er; nitride films; nitride passivation; optical activity; photoluminescence; Annealing; Erbium; Luminescence; Optical coupling; Optical films; Passivation; Photonics; Semiconductor films; Silicon; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location
Seoul
Print_ISBN
978-1-4244-1173-3
Electronic_ISBN
978-1-4244-1174-0
Type
conf
DOI
10.1109/CLEOPR.2007.4391350
Filename
4391350
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