Title :
Efficiency droop reduction in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells
Author :
Wang, C.H. ; Chang, W.T. ; Chang, S.P. ; Li, J.C. ; Kuo, H.C. ; Lu, T.C. ; Wang, S.C.
Author_Institution :
Dept. of Photonic & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
InGaN/GaN LED with graded-thickness MQWs has superior hole and radiative recombination distribution by simulation modeling, and electroluminescence spectrum reveals additional emission from the narrower wells. Output power and efficiency droop behavior are both improved.
Keywords :
III-V semiconductors; electroluminescence; electron-hole recombination; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor device models; wide band gap semiconductors; InGaN-GaN; efficiency droop reduction; electroluminescence spectrum; graded thickness multiple quantum wells; light emitting diode; output power; radiative recombination distribution; simulation modeling; Current density; Electroluminescence; Gallium nitride; Light emitting diodes; Quantum well devices; Radiative recombination; Scattering;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
