Theoretical estimation of optical absorption coefficient inside an InAs/InGaAs semiconductor Quantum Dot

Author

Ardakani, Sadreddin Behjati ; Kaatuzian, Hassan

Author_Institution

Dept. of Electr. Eng., Amirkabir Univ. of Technol. (Tehran Polytech.), Tehran, Iran

fYear

2011

fDate

13-16 Nov. 2011

Firstpage

1

Lastpage

6

Abstract

In this work we extract a novel formula for optical absorption coefficient of Quantum Dots (QDs) in frame of 8band k.p modeling. Also this is useful for any other several band k.p frame. Using this formula, we analyze and simulate absorption spectra for a typical InAs/In_0.4Ga_0.6As QD, both for TE and TM components of absorption spectra. Size and alloy fraction of QD is chosen such that the absorption spectra has some components around 1.55μm that will be applicable for single photon fiber optic communication.

Keywords

III-V semiconductors; absorption coefficients; gallium arsenide; indium compounds; infrared spectra; k.p calculations; semiconductor quantum dots; 8band k.p modeling; InAs-InGaAs; TE components; TM components; absorption spectra; alloy fraction; optical absorption coefficient; semiconductor quantum dot; size fraction; Abstracts; Quantum Dots (QDs); Strain Reducing Layer (SRL); k.p modeling; optical absorption coefficient;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications and Photonics Conference and Exhibition, 2011. ACP. Asia

Conference_Location

Shanghai

ISSN

2162-108X

Print_ISBN

978-0-8194-8961-6

Type

conf

DOI

10.1117/12.904171

Filename

6210666