Title :
Theoretical estimation of optical absorption coefficient inside an InAs/InGaAs semiconductor Quantum Dot
Author :
Ardakani, Sadreddin Behjati ; Kaatuzian, Hassan
Author_Institution :
Dept. of Electr. Eng., Amirkabir Univ. of Technol. (Tehran Polytech.), Tehran, Iran
Abstract :
In this work we extract a novel formula for optical absorption coefficient of Quantum Dots (QDs) in frame of 8band k.p modeling. Also this is useful for any other several band k.p frame. Using this formula, we analyze and simulate absorption spectra for a typical InAs/In0.4Ga0.6As QD, both for TE and TM components of absorption spectra. Size and alloy fraction of QD is chosen such that the absorption spectra has some components around 1.55μm that will be applicable for single photon fiber optic communication.
Keywords :
III-V semiconductors; absorption coefficients; gallium arsenide; indium compounds; infrared spectra; k.p calculations; semiconductor quantum dots; 8band k.p modeling; InAs-InGaAs; TE components; TM components; absorption spectra; alloy fraction; optical absorption coefficient; semiconductor quantum dot; size fraction; Abstracts; Quantum Dots (QDs); Strain Reducing Layer (SRL); k.p modeling; optical absorption coefficient;
Conference_Titel :
Communications and Photonics Conference and Exhibition, 2011. ACP. Asia
Conference_Location :
Shanghai
Print_ISBN :
978-0-8194-8961-6
