Title :
Complete nonlinear model for the MRC (MOS resistive circuit)
Author :
Vidal, E. ; Porta, S. ; Martínez, H. ; Alarc, E. ; Poveda, A.
Author_Institution :
Dept. d´´Enginyeria Electron., Univ. Politecnica de Catalunya, Barcelona, Spain
Abstract :
The most significant sources of nonlinearity in the MOS resistive circuit behaviour are identified and deeply analysed in this contribution. Their influence on the MRC performance and, therefore, in the circuits containing such structure is evidenced through some examples and evaluated. Some reasonable hints about the way to minimise their undesired effects are provided
Keywords :
MOSFET circuits; circuit tuning; nonlinear network analysis; MOS resistive circuit; MRC; nonlinear model; undesired effects; Circuit topology; Coupling circuits; Degradation; Joining processes; Linearity; MOSFET circuits; Operational amplifiers; Proposals; Resistors; Voltage;
Conference_Titel :
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location :
Geneva
Print_ISBN :
0-7803-5482-6
DOI :
10.1109/ISCAS.2000.857046
