DocumentCode :
2243534
Title :
Optical properties of GaN/AlN quantum dots under intense laser field
Author :
Zhang, Lu ; Yu, Zhongyuan ; Yao, Wenjie ; Liu, Yumin ; Feng, Hao
Author_Institution :
State Key Lab. of Inf. Photonics & Opt. Commun.; Inst. of Inf. Photonics & Opt. Commun., Beijing Univ. of Posts & Telecommun., Beijing, China
fYear :
2011
fDate :
13-16 Nov. 2011
Firstpage :
1
Lastpage :
7
Abstract :
We investigate the influence of intense laser field on the energy state and optical properties induced by sublevels transition of quantum dot. The quantum system includes the piezoelectric effect that rarely mentioned in related references. The linear, nonlinear and total optical properties for two cases with different quantum dot radius are examined. The peak positions and the peak amplitudes of spectra change drastically due to different size of quantum dot.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; laser beams; nonlinear optics; piezoelectricity; wide band gap semiconductors; GaN-AlN; energy state; intense laser field; linear optical properties; nonlinear optical properties; piezoelectric effect; quantum dot; sublevels transition; Abstracts; Gallium nitride; laser field; optical property; piezoelectric; quantum dot;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference and Exhibition, 2011. ACP. Asia
Conference_Location :
Shanghai
ISSN :
2162-108X
Print_ISBN :
978-0-8194-8961-6
Type :
conf
DOI :
10.1117/12.904092
Filename :
6210680
Link To Document :
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